guiding-the-design-of

Analysis of different contributions to the overall AMR rate. (a) Relative importance of the three different initial valley arrangements for electrons in the eeh process, which are illustrated in (b) with the f-type arrangement contributing most strongly. Strength of phonon-assisted AMR for eeh (solid black) and hhe (red dash) processes as a function of phonon energy (c) and wave vector magnitude (d), where the strongest peaks are associated with TA phonons, highlighted in the inset phonon dispersion. (e) The distribution of excited carrier states throughout the first Brillioun zone for the direct and phonon-assisted eeh and phonon-assisted hhe processes, with slices removed to show the internal structure. Credit: Kyle Bushick, University of Michigan